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| SMD Type High Speed Switching Diodes KAS516 (BAS516) Diodes SOD-523 1.2 0.1 Unit:mm 0.3 0.05 0.6 0.1 Features Small Surface Mounting Type High Speed 0.8 0.05 1.6 0.1 0.77max Absolute Maximum Ratings Ta = 25 Parameter Repetitive Peak Reverse Voltage DC Reverse Voltage Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current Total Power Dissipation Junction Temperature Storage Temperature www..com Symbol VRRM VR IF IFRM IFSM Ptot Tj Tstg Rating 85 75 250 500 0.5 500 150 -65 to +150 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Symbol IF = 1mA Forward Voltage VF IF = 10mA IF = 50mA IF = 150mA Reverse Current Capacitance Between Terminals Reverse Recovery Time IR CT trr VR = 25V VR = 75V VR = 0V, f = 1.0MHz IF = 10mA, RL =100 Testconditons Min Typ Max 0.715 0.855 1.0 1.25 0.03 1.0 1.0 4.0 A pF ns V Unit Marking Marking 6 0.07max +0.05 0.1 -0.02 www.kexin.com.cn 1 SMD Type KAS516 (BAS516) Electrical Characteristics Curves Diodes Transistors MGM762 MBG382 IF(mA) IF(mA) 500 300 Typ. Typ. Max. 400 200 300 Tj = 150 200 100 100 Tj = 25 0 0 50 100 150 200 0 0 1 2 Ts() VF(V) Maximum Permissible Continuous Forward Current As A Function Of Soldering Point Temperature. Forward Current As A Function Of Forward Voltage. MBG704 100 www..com IFSM(A) 10 Tj = 25 1 0.1 1 10 100 1000 10000 tp(s) Maximum Permissible Non-repetitive Peak Forward Current As A Function Of Pulse Duration. 2 www.kexin.com.cn SMD Type KAS516 (BAS516) Diodes MGA884 MBK881 IR(nA) Cd(pF) 100000 0.6 f = 1MHZ Tj = 25 VR = 75V 10000 0.4 Max 1000 VR = 75V 0.2 100 Typ Typ 10 0 100 200 0 0 4 8 12 16 VR = 25V Tj() VR(V) Reverse Current As A Function Of Junction Temperature. Diode Capacitance As A Function Of Reverse Voltage(Typical Values) www..com www.kexin.com.cn 3 |
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